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https://doi.org/10.1039/c4tc02455a
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Cite Journal: Journal of Materials Chemistry C |  Publication Date: Jan 1, 2015 |
 Citations: 22 |
BN-incorporated amorphous Ge2Sb2Te5 (GST) films were deposited by an ion beam sputtering deposition method. The power-time-effect (PTE) diagrams showed that as the amount of BN increased, the crystallization temperature and phase change speed increased.
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