Abstract
In this work, photoluminescence (PL) from β-FeSi2 thin film grown by ion beam sputter deposition (IBSD) method is investigated. For the first time, several small PL peaks are observed in the as-grown IBSD films at around 0.77 and 0.83eV below 100K. By thermal annealing at 1153K for more than 24h, these films showed a strong peak at around 0.81eV with increased intensity by more than an order of magnitude at 6K. These annealed samples showed luminescence up to room temperature, while no PL was observed above 100K for the as-grown films.
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