Abstract
Time-resolved photoluminescence is used to study low-temperature-grown (LTG) GaAs with Be doping. It is observed that the carrier trapping time in the as-grown LTG GaAs increases with Be doping. Similar effect is observed also in the annealed samples doped with less than 3×1019 cm−3 of Be. At higher doping levels, the trapping time in these samples is abruptly reduced to below 100 fs. This behavior is attributed to changes in As antisite density and the compensation effect of Be.
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