Abstract
Time-resolved photoluminescence studies were performed on epitaxially grown InP either doped with iron or codoped with iron and sulphur to gain information on carrier trapping characteristics of Fe/sup 3+//Fe/sup 2+/. The carrier trapping time was found to be dependent on iron concentration in InP:Fe and both, iron and sulphur concentrations in InP:Fe,S. From the measured trapping times in both InP:Fe and InP:Fe,S the electron and hole capture cross sections of the Fe deep levels are determined as /spl sigma//sub e/=1/spl times/10/sup -15/ cm/sup 2/ and /spl sigma//sub h/=6/spl times/10/sup -15/ cm/sup 2/ respectively. From the derived capture cross sections and the measured trapping times, the concentration of the different iron species is calculated in both, InP:Fe and InP:Fe,S. It reveals that the active iron concentration (Fe/sup 3+/) exceeds 1/spl times/10/sup 18/ cm/sup -3/ for the highest total iron doping concentrations in InP:Fe.
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