Abstract
To solve the von Neumann performance bottleneck, many kinds of magnetic logic devices are proposed. However, the operation speed, power consumption, and error rate of these devices are incompatible with complementary metal−oxide−semiconductor (CMOS) logic, and moreover, cascading of the devices is difficult. Herein, instead, a new voltage‐dominated magnetic logic‐memory device is proposed, with switching time of 300 ps and power consumption of 150 fJ, representing ≈10 times improvement compared with CMOS logic on the same scale. The device has a reliable output ratio of >3000%, a low working magnetic field of <10 mT, and a low error rate of ≈10−7. Moreover, complex logic operations, such as XOR gates and a full adder, can be realized using this device via cascading. As a result of these advantages, the magnetic logic‐memory device is well suited for practical applications.
Highlights
Conventional computers are built on devices combining a volatile with DWs propagating through complex networks of nanowires under the action of an externally applied magnetic field or current have been investigated.[8,10] For magnetic logic based on silicon-based complementary metalÀoxideÀsemiconductor magnetic tunnel junctions (MTJs) and Schottky diode-enhanced MTJs, basic logic and (CMOS) logic processor with external nonvolatile memory. arithmetic operations have been implemented.[3,12,13]Frequent communication between the logic processor and the the power demand for magnetic DW logic and MTJ-memory results in low speed and high power consumption[1] based logic is determined by the critical current for magnetic
For magnetic logic based on silicon-based complementary metalÀoxideÀsemiconductor MTJs and Schottky diode-enhanced MTJs, basic logic and (CMOS) logic processor with external nonvolatile memory. arithmetic operations have been implemented.[3,12,13]
A DW logic of 1 μm in size has logic and built-in nonvolatile memory through the use of magnetic logic[2], such as magnetic field-controlled logic,[3] electric field-controlled magnetic logic,[4,5,6,7] magnetic domainwall (DW) logic,[8,9,10,11] magnetic logic based on magnetic tunnel junctions (MTJs),[12,13] or the anomalous Hall effect switching time of 6.25 ns and power consumption of 20.4 pJ,[10] while magnetic logic based on a 40 nm MTJ has a switching time of 1.31 ns and power consumption of 49.6 pJ.[17]
Summary
Conventional computers are built on devices combining a volatile with DWs propagating through complex networks of nanowires under the action of an externally applied magnetic field or current have been investigated.[8,10] For magnetic logic based on silicon-based complementary metalÀoxideÀsemiconductor MTJs and Schottky diode-enhanced MTJs, basic logic and (CMOS) logic processor with external nonvolatile memory. arithmetic operations have been implemented.[3,12,13]. Www.advancedsciencenews.com www.advintellsyst.com have investigated the use of voltage-controlled n-type negative differential resistance (NDR), due to its small turn-on resistance and switching time, and the use of Hall voltage, instead of current imbalance, so that the logic operations and magnetic switching can be electrically separated and the required power consumption for the magnetic logic can be dramatically reduced. Based on this approach, we propose in this work an ultrafast and ultralow-power voltage-dominated magnetic logic device. Its switching time and power consumption can achieve values of 300 ps and 150 fJ, representing a ten times improvement compared with CMOS logic devices of the same size
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