Ultrafast 1.55 μm all-optical switching using low-temperature-grown multiple quantum wells

Abstract

Low-temperature grown surface-reflection all-optical switching has been demonstrated with ultrafast photoresponse (1.5 ps), low switching energy (2 pJ), high-contrast (13 dB), polarization independence, and wide operation wavelength range in the 1.55 μm band using low-temperature-grown Be-doped strained InGaAs/InAlAs multiple quantum wells. The combination of low-temperature growth and Be-doping contributes to the ultrafast photoresponse. Additionally, the introduction of compressive strain and a mirror with 1% reflectivity greatly enhances optical nonlinearities.