Ultra wide-band LNA using RFCMOS technology and tunability band with neural network

Abstract

An ultra-wideband (UWB) 3.1- to 10.6-GHz low noise amplifier (LNA) employing a common-gate stage for wideband input matching and tunability with neural network is presented In this paper. Designed in a commercial 0.18-μm 1.8-V standard RFCMOS technology, the proposed UWB LNA achieves fully on-chip circuit implementation, contributing to the realization of a single-chip CMOS UWB receiver. The proposed UWB LNA achieves above 17.08dB power gain with a good input match (S11<−10 dB) over the 7.5-GHz bandwidth (from 3.1 GHz to 10.6 GHz), and an average noise figure of 4.8 dB, while drawing 18.4-mA dc biasing current from the 1.8-V power supply. A gain control mechanism is also introduced for the first time in the proposed design by varying the biasing current of the gain stage without influencing the other figures of merit of the circuit so as to accommodate the UWB LNA in various UWB wireless transmission systems with different link budgets. By product data Advanced design system (ADS) and using neural network, we can design UWB in 3.1–10.6GHz frequency range for every standard band (0528–7.4GHz). The result tunability with Neural Network had error <1% in target.