Abstract
The objective of this paper is to investigate a ultra-wideband (UWB) low noise amplifier (LNA) by utilizing a two-stage cascade circuit schematic associated with inductive-series peaking technique, which can improve the bandwidth in the 3-10 GHz microwave monolithic integrated circuit (MMIC). The proposed UWB LNA amplifier was implemented with both co-planer waveguide (CPW) layout and 0.15-μm GaAs D-mode pHEMT technology. Based on those technologies, this proposed UWB LNA with a chip size of 1.5 mm x 1.4 mm, obtained a flatness gain 3-dB bandwidth of 4 - 8 GHz, the constant gain of 4 dB, noise figure lower than 5 dB, and the return loss better than –8.5 dB. Based on our experimental results, the low noise amplifier using the inductive-series peaking technique can obtain a wider bandwidth, low power consumption and high flatness of gain in the 3 - 10 GHz. Finally, the overall LNA characterization exhibits ultra-wide bandwidth and low noise characterization, which illustrates that the proposed UWB LNA has a compact size and favorable RF characteristics. This UWB LNA circuit demonstrated the high RF characterization and could provide for the low noise micro-wave circuit applications.
Highlights
In the ultra-wideband (UWB) applications, the Federal Communications Commission (FCC) had offered the 7500 MHz bandwidth in the 3.1 - 10.6 GHz frequency range [1]
The objective of this paper is to investigate a ultra-wideband (UWB) low noise amplifier (LNA) by utilizing a two-stage cascade circuit schematic associated with inductive-series peaking technique, which can improve the bandwidth in the 3 - 10 GHz microwave monolithic integrated circuit (MMIC)
In the UWB LNA circuit technology, the CMOS-based technology has been extensively to be adopted in recent years
Summary
In the ultra-wideband (UWB) applications, the Federal Communications Commission (FCC) had offered the 7500 MHz bandwidth in the 3.1 - 10.6 GHz frequency range [1]. Cascode Common-Source Circuit network associated with inductive peaking method [7] in the inter-stage, which could improve the noise characterization and to further extend bandwidth in the 3 - 10 GHz. In addition, considering electromagnetic (EM) coupling issue in the layout, this circuit was realized by the co-planer waveguide (CPW) technology, which greatly benefited by the unnecessary back-side fabrication, good electronic isolation property and compact drawing in the circuit layout. A UWB LNA MMIC using the inductive peaking method as well as the CPW structure was adopted in this work, which was implemented by the 0.15 μm GaAs pHEMT technology. The inductive peaking method associated with the CPW structure was employed in this study, which demonstrated that the proposed UWB LNA was well suitable for the microwave integrated circuits
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