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https://doi.org/10.1039/d3tc03457g
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Cite Journal: Journal of Materials Chemistry C |  Publication Date: Jan 1, 2023 |
 Citations: 9 |
Affiliation: Henan University of Science and Technology
The low lattice mismatch between β-Ga2O3 and GaN alleviates interface defects and improves device performance, and the EL spectra of Ga2O3/GaN heterojunction devices emit ultra-violet and yellow-green light at forward and reverse bias.
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