Abstract
We report bidirectional direct-current electroluminescence (EL) from i-MgxZn1−xO/n-ZnO/SiOx double-barrier heterostructures on Si. When the heterostructure-based device is forward biased with negative voltage applied on Si, ultraviolet (UV) emission is more intense than visible emissions. The visible emissions appear only at sufficiently high currents. As the device is reverse biased, the visible emissions dominate the EL at low currents. However, they are gradually overridden by the UV emission with increasing current. The EL mechanism has been discussed in terms of energy band structures of the device under forward and reverse biases.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
