Abstract
Estimation methods for ultra-shallow profiling with secondary ion mass spectrometry (SIMS) were investigated. The depth and concentration of ultra-shallow profiles were calibrated using multi-delta-doped samples and bulk-doped samples. Boron profiles, whose implantation energy is 200 eV or less, were measured by backside SIMS analysis in order to minimize the atomic mixing effect. This analysis enabled accurate junction depth measurements for even 200 eV boron implanted samples when the primary oxygen ion energy was 500 eV or less, but the sample preparation time was relatively long. SIMS depth resolution functions were then extracted from surface-side and backside (true) profiles in order to deconvolute degraded surface-side profiles. This deconvolution analysis of SIMS (surface-side) profiles, using the depth resolution functions, provided profiles of similar quality to those obtained by backside SIMS analysis and was a relatively quick process.
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