Ultra-low power resistive random-access memory based on VO2/TiO2 nanotubes composite film

Abstract

In this study, a resistive random access memory (RRAM) based on VO2/TiO2 nanotubes was prepared. Compared with single VO2-based RRAM or TiO2 nanotube-based RRAM, the Ag/VO2/TiO2 nanotube/FTO RRAM device has advantages such as low power consumption (∼0.154 pJ), excellent stability (3000 DC cycles), and high switching rate (300 times). It still shows certain advantages compared with TiO2-based low-power RRAM (0.5 pJ). The device can also exhibit 20 consecutive long-term enhancement/suppression behaviors, which can be used to simulate brain-like activity and achieve recognition accuracy of 95% (8 × 8 pixels) and 88% (28 × 28 pixels) in artificial neural network identification field.