Abstract
We present a visible III-nitride gain medium based on type-II InGaN-GaNAs quantum well (QW), employing thin dilute-As (∼3%) GaNAs layer. The utilization of GaNAs layer shifts the hole confinement to the center of the type-II QW, which significantly reduces the charge separation effect. The optical gain and spontaneous recombination rate of the type-II InGaN-GaNAs QW are analyzed and compared with those of conventional InGaN QW emitting in the blue regime (λ∼450nm), using six-band k.p formalism for energy dispersion of the III-nitride wurtzite semiconductor. The use of type-II QW leads to significant improvement in the optical gain and spontaneous recombination rate.
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