Abstract
Type-II InGaN–GaNAs quantum wells (QWs) with thin dilute-As (∼3%) GaNAs layer are analyzed self-consistently as improved III-nitride gain media for diode lasers. The band structure is calculated by using a six-band k⋅p formalism, taking into account valence band mixing, strain effect, spontaneous and piezoelectric polarizations, as well as the carrier screening effect. The type-II InGaN–GaNAs QW structure allows large electron-hole wave function overlap by confining the hole wave function in the GaNAs layer of the QW. The findings based on self-consistent analysis indicate that type-II InGaN-GaNAs QW active region results in superior performance for laser diodes, in comparison to that of conventional InGaN QW. Both the spontaneous emission radiative recombination rate and optical gain of type-II InGaN–GaNAs QW structure are significantly enhanced. Reduction in the threshold current density of InGaN–GaNAs QW lasers is also predicted.
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