Abstract
Self-assembled InAs quantum dots (QDs) in InAlAs grown on (0 0 1) and (3 1 1)B InP substrates by molecular beam epitaxy (MBE) have been comparatively investigated. A correlated study of atomic force microscopy (AFM) and photoluminescence (PL) disclosed that InAs QDs grown on high-index InP substrates can lead to high density and uniformity. By introducing a lattice-matched InAlGaAs overlayer on InAlAs buffer, still more dense and uniform InAs QDs were obtained in comparison with InAs QDs formed with only InAlAs matrix. Moreover, two-dimensional well-ordered InAs dots with regular shape grown on (3 1 1)B InP substrates are reported for the first time. We explained this exceptional phenomenon from strain energy combined with kinetics point of view.
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