Abstract
The effects of InP substrate orientations on self-assembled InAs quantum dots (QDs) have been investigated by molecular beam epitaxy (MBE). A comparison between atomic force microscopy (AFM) and photoluminescence (PL) spectra shows that a high density of smaller InAs islands can be obtained by using such high index substrates. On the other hand, by introducing a lattice-matched underlying In 0.52Al 0.24Ga 0.24As layer, the InAs QDs can be much more uniform in size and have a great improvement in PL properties. More importantly, 1.55-μm luminescence at room temperature (RT) can be realized in InAs QDs deposited on (001) InP substrate with underlying In 0.52Al 0.24Ga 0.24As layer.
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