Abstract
We have demonstrated mid-infrared emission from the self-assembled InAs quantum dots grown on InP substrate by metal-organic vapor phase epitaxy using low toxic tertiarybutylarsine and tertiarybutylphosphine as group V sources in pure nitrogen ambient. Emission wavelength of the InAs quantum dots has been extended to mid-infrared region by embedding the InAs quantum dots in graded InxGa1-xAs matrix layers. When compared with that of the InAs quantum dots grown on lattice matched In0.53Ga0.47As/InP matrix, emission wavelength of the InAs quantum dots red shifted by up to 370 nm when embedded the InAs quantum dots in graded In0.53rarr0.8Ga0.47rarr0.2As barriers. The longest emission wavelength of >2.35 mum from the self-assembled InAs quantum dot structure has been measured at 77 K. The full-width at half-maximum of the photoluminescence emission spectrum of the InAs quantum dots is as narrow as 25.5 meV. The results achieved would be promising to high performance mid-infrared quantum dot lasers on InP substrate
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