Abstract
A two-dimensional numerical model of a deep submicron metal oxide semiconductor field effect transistor (MOSFET) has been developed to examine theoretically the effect of ionizing radiation on the threshold voltage and the global output characteristics of the device. The radiation induced change in the flat-band voltage has been utilized to estimate the changes in the surface potential and hence the threshold voltage of the device in the irradiated condition. The drain current–drain voltage (ID–VD) characteristics of the device in the irradiated condition have been estimated numerically by taking into consideration the radiation induced changes in the surface potential and mobility of the carriers in the surface channel. The model developed here has been validated by reported experimental results for the pre-irradiated case. It is seen that the new model gives a better fit to experimental results as compared to standard SPICE model (level 3). The model can be used as a basic tool for characterizing deep submicron MOSFET in pre- and post-irradiated condition.
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