Abstract
We present modulation-doped ordered-InGaP/disordered-InGaP homojunctions grown, lattice matched to GaAs, by metalorganic vapour phase epitaxy. Capacitance-voltage ( C-V) profiling techniques, temperature-dependent Hall, Shubnikov-De Haas and photoluminescence measurements have been used for characterization. The C-V measurements show a narrow profile at the homointerface with an order of magnitude reduction in carrier density within 3 nm. From temperature dependent Hall measurements, typical two-dimensional behaviour is observed with sheet carrier densities as high as 3.6 x 10 13 cm -2 ( T<100 K). No carrier freeze-out and constant mobilities around 850 cm 2 V -1 s -1 below T = 100 K are observed. The 300 K channel conductivity of this new type of junction is 3.2 x 10 -3 Ω -1, which is higher than reported in other two-dimensional electron gases. Shubnikov-De Haas measurements indicate the presence of two occupied excited subbands. The photoluminescence measurements clearly show a moving emission which involves the 2DEG.
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