Abstract
Capacitance-voltage (C-V) profiling techniques and temperature-dependent Hall and resistivity measurements have been used to characterize modulation-doped ordered-GaInP2/disordered-GaInP2 homojunctions grown by metalorganic vapor phase epitaxy. The C-V measurements showed a narrow profile at the homointerface with an order of magnitude reduction in carrier density within 3 nm. Typical two-dimensional behavior was observed from Hall data showing sheet carrier densities as high as 3.6×1013 cm−2 without carrier freeze out and constant mobilities around 900 cm2 V−1 s−1 below T=100 K. The 300 K channel conductivity of this new junction is 3.2×10−3 Ω−1, which is higher than reported in other two-dimensional electron gases.
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