Two-dimensional characterization of 3C-SiC layers using scanning internal photoemission microscopy: Mapping of electrical characteristics and crystal quality in domain boundary regions

Abstract

3C-SiC layers epitaxially grown on 4H-SiC substrates have been characterized by forming Ni Schottky contacts by scanning internal photoemission microscopy. The sample surface consists of 3C-SiC domains with a flat top. By focusing and scanning a laser beam over the contacts, the domain pattern was clearly visualized in a photoyield map. By combining photoyield maps measured with red and green lasers, we found that the Schottky barrier height is smaller and larger recombination occurs in the boundary regions than in the flat regions.