Observations of inhomogeneity of 3C-SiC layers grown on 6H-SiC substrates by using scanning internal photoemission microscopy

Abstract

3C-SiC layers epitaxially grown on 6H-SiC substrates have been characterized by forming Ni Schottky contacts by scanning internal photoemission microscopy (SIPM). SIPM measurements with a green laser clearly imaged domain patterns consisting of 3C- and 6H-SiC. SIPM with a red laser also revealed that boundaries of the 3C/6H and 3C/3C domains have a lower Schottky barrier. These results are consistent with the current–voltage characteristics. We found that this method is a powerful tool for investigating the inhomogeneity of both crystal quality and electrical characteristics.