Abstract

Both p - n and n - p heterojunctions of ZnO-MoS2 have been fabricated in order to understand the performance of electron and hole transport properties in solar cells and a self-powered photodetector system. Atomically thin 2-dimensional (2D) MoS2 was prepared by using a spin coating method with controlled process times, whereas ZnO nanowires were prepared by using a plasma sputtering deposition technique. The nanoscale morphologies, composites, and photoelectric properties of nanocomposites were examined using scanning electron microscopy, energy-dispersive X-ray spectroscopy, and micro-Raman scattering spectroscopy, respectively. 2D heteronanostructures have exhibited an enhanced performance as compared to single-material-based prototypes. In photovoltaic mode, n - p heterojunction of the ZnO-MoS2-based prototype appears to have much better photoelectric conversion efficiency than that in the case with p - n junction, indicating highly effective hole transport properties of 2D MoS2 materials. Both band broadening and band shift were observed. Furthermore, the bias, annealing, and synergistic effects on the generated photocurrents and the response times were evaluated. The newly designed prototype exhibits exceptional properties: a broadband spectral response, a high signal-to-noise ratio, and excellent stability.

Highlights

  • Thin 2-dimensional (2D) molybdenum disulfide (MoS2) materials have attracted tremendous attention due to their unique electronic, photoelectric, and photocatalytic properties and immense potential in the fields of sensor, environment purification, and solar energy conversion [1,2,3,4,5,6]

  • A rough, irregular, and clustered surface type was generated when the number of spin coating runs was increased. This arrangement of numerous randomly orientated MoS2 tightly packed into nanostructured ZnO would naturally result in a particular electronic structure, which determined the material’s photoelectric capabilities

  • We extended the previous work on the use of a binary MoS2 nanosheet semiconductor as an active layer by exploring emerging two types of composite heteronanostructures

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Summary

Introduction

Thin 2-dimensional (2D) molybdenum disulfide (MoS2) materials have attracted tremendous attention due to their unique electronic, photoelectric, and photocatalytic properties and immense potential in the fields of sensor, environment purification, and solar energy conversion [1,2,3,4,5,6]. The peculiar heterostructures obtained by coupling ZnO nanowires (NW) and 2D MoS2 nanosheets (NS) with either n-p-type or p-n-type heterojunction nanostructures have been fabricated, characterized, and used for the development of prototypes of solar cells and selfpowered photodetectors.

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