Abstract
This paper investigates the impact of titanium (Ti) doping on zinc oxide (ZnO) nano wires (NWs) in non-volatile capacitive memory devices (NVCMDs) through fabrication and characterizations. ZnO NWs were fabricated using pulsed laser deposition (PLD), while Ti thin film (TF) was deposited via electron beam evaporation (e-beam). Field emission gun scanning electron microscopy (FEGSEM) confirmed the formation of ZnO NWs and Ti-doped ZnO NWs (Ti:ZnO NWs) on an n-type silicon (Si) substrates, with elemental compositions determined by energy dispersive X-ray spectroscopy (EDX). Structural characterization was conducted on the samples using high-resolution X-ray diffraction (HRXRD). Gold (Au) interdigitated electrodes (IDE) were employed to fabricate two distinct devices: Au IDE/ZnO NWs and Au IDE/Ti:ZnO NWs. Comparative analysis revealed that the Au IDE/Ti:ZnO NWs device exhibited a lower frequency dispersion fd value (0.025×109 F) compared to Au IDE/ZnO NWs device (0.029×109 F), indicating enhanced signal propagation due to Ti doping. The Au IDE/Ti:ZnO NWs device also demonstrated a high free charge carrier donor concentration ND value of 2.02×1012 /cm3, a significant trap concentration Nt value of 4.44×1011 /cm3 at an 8MHz frequency response. Additionally, it exhibited lower tangent loss (tan(δ)) value of 7430, maximum conductance Gmmax value of 13.40 mS, lower interface trap state density (ITSD) value of 2.05×1014 eV1 cm2, a maximum memory window (∆VMW) of 6.9V at ±15V, improved endurance, and superior data retention, making the Au IDE/Ti:ZnO NWs device a promising candidate for next-generation NVCMDs applications.
Published Version
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