Abstract
Using a free-electron laser(FEL) source, we have studied the two-photon-absorption (TPA) effect in GaAs∕AlGaAs quantum-well infrared photodetector (QWIP). The TPA-induced photoresponse in QWIPs has been measured under different FEL excitation power by the photoconductivity method. The effective-mass approximation theory is used for the QWIP structure to explain the photoresponse behavior. It is demonstrated that the TPA-induced photocarrier density is proportional to the square of the excitation power. Based on the experimental results, the TPA coefficients of QWIPs were obtained to be 0.0045, 0.0030, 0.0103, and 0.0061cm∕MW for the excitation lines of 10.6, 10.7, 11.9 and 13.2μm, respectively. The dependence the TPA coefficients on the excitation wavelength is explained by our theoretical model.
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