Abstract
Nonlinear photoresponse effects at high excitation power in Quantum Well Infrared Photodetectors (QWIPs) arestudied both experimentally and theoretically. The photoconductivity nonlinearity is mainly caused by a redistri-bution of the electric potential at high power, which leads to a decrease of electric field in the bulk of the QWIP.As a result of the decreased field, the photoexcited electron escape probability and drift velocity decrease, resultingin a decrease of responsivity. These effects are strongly influenced by QWIP structural parameters and operatingconditions. In QWIPs with a few QWs the infrared power required to observe a decrease of responsivity is muchlower than that needed to cause the saturation of the intersubband absorption. Key factors in designing a QWIPwith a suppressed nonlinearity are discussed.Keywords: Quantum well infrared photodetector, Nonlinear photoresponse, Responsivity degradation, High power,Modulation of electric field, Injecting contact
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