Two electron transitions of the exciton bound at the Si Donor confined in GaAs/AlxGa1-xAs quantum wells

Abstract

The exciton bound to the shallow Si-donor confined in a 100A wide GaAs quantum well has been studied in selective photoluminescence (SPL) and photoluminescence excitation (PLE) spectroscopy. The transition from the ground state, ls(Γ6), to the first excited state, 2s(Γ6), of the confined Si donor has been observed via two-electron transitions (TETs) of the donor bound exciton observed in SPL for the first time to the best of our knowledge. The interpretation of the TET peaks is confirmed by PLE measurements. Further, from Zeeman measurements, the magnetic field dependence of the donor ls(Γ6)-2s(Γ6) transition energy has been determined.