Abstract
AbstractThe electron beam-induced current technique (EBIC) developed at CEA-Leti has been a valuable tool for studying the transport properties of minority carriers in HdCdTe. Indeed, previous work has demonstrated the use of this technique for estimating diffusion length from the exponential decay of EBIC as a function of junction distance, as well as direct measurement of the modulation transfer function (MTF) of small pixel pitch diodes. In this work, a modulated electron beam and a lock-in amplifier are used to measure the variation in current and phase shift with the scan distance to the junction. This work is focused on the estimation of the minority carrier lifetime from the linear evolution of the phase shift as a function of junction distance.
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