Two-Dimensional Quantum-Mechanical Modeling and Simulation of Strained-Si Fin Field Effect Transistor (FinFET) on SiGe-On-Insulator

Abstract

A strained-Si fin field effect transistor (SSFinFET) on SiGe-on-insulator is modeled and using two-dimensional Schrödinger and Poisson equations quantum-mechanically simulated in a self-consistent manner. The quantum electron concentration in an SS fin is then obtained using a two-dimensional Schrödinger equation. The field-dependent mobility in SS fin is calculated using the doping-dependent mobility which considered strain and velocity overshoot effects. These effects give rise to an enhancement in the drain current of SSFinFET by up to 25% compared with the conventional FinFET using relaxed Si-on-insulator (RSFinFET). For the gate length 1.5 times longer than fin width, the drain induced barrier lowering (DIBL) and subthreshold swing are below 0.1 V/V and 60 mV/dec, respectively, regardless of whether Si-fin experiences a strain. These results indicate that the ratio of gate length to fin width should be above approximately 1.5 to suppress short channel effects and DIBL in both SSFinFET and RSFinFET.