Abstract
This paper investigates the influence of gate material work function on the electrical characteristics as well as short channel effects exhibited by Dual Material Gate-Junctionless FinFETs (DMG-JLFinFETs) with channel length as low as 10 nm. 3D TCAD simulations performed on these devices show that various device parameters like threshold voltage, ON-current, etc, are influenced by the work function difference between the control gate and screen gate material of DMG-JLFinFET. DMG-JLFinFETs exhibit very low Drain Induced Barrier Lowering (DIBL), far lesser than its Single Material Gate (SMG) counterpart. Subthreshold Swing (SS) of DMG devices is higher than SMG devices. The optimal ratio of control gate length to total gate length in DMG-JLFinFET is found to be between 0.5 and 1 for better suppression of short channel effects.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
