Abstract

A Facing Target Sputtering (FTS) technique with a configuration consisting of two sets of vertically parallel facing targets and a substrate holder mounted perpendicular to the target planes has been designed and fabricated. This system is capable of producing thin multilayer films as well as alloy films. The discharge characteristics of the FTS system when dc power is applied is analysed and the discharge currents were found to be 3–5 times the values obtained with a single target (the conventional dc sputtering). The discharge currents also strongly depend on the Inter Target Distance (ITD) showing a decreasing trend with increasing ITD. The influence of pressure, Substrate To Target Distance (STD) and the ITD on the rate of deposition of copper films is studied. The rate of deposition increases with increase in Argon pressure and decreases with increase in STD and ITD.

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