Tunneling injection damage in Si-SiO 2 structures and its correlation with oxidation conditions

Abstract

Charge trapping and interface state generation phenomena in metal-oxide-semiconductor (MOS) capacitors fabricated by various process conditions have been studied using Fowler-Nordheim tunneling electron injection. The oxide field strenght is related to the charge build-up mechanism for dry oxides and not for wet oxides. The positive charge build-up and the interface state generation are enhanced by high-temperature oxidation and post-oxidation annealing. It can be concluded that low temperature dry oxidation is essential for reduction of the device degradation induced by electron injection.