Charge Trapping and Interface State Generation in Rapid Thermal Processed Oxide and Nitrided Oxide MOS Capacitors by Electron Photoinjection from Al Gate and Si Substrate

Abstract

Charge trapping and interface state generation in rapid thermal processed (RTP) oxide and ‐nitrided oxide metal oxide semiconductor capacitors have been investigated by internal photoemission (IPE) electron injection from both the Al gate and the Si substrate. It is found that the generation rate of the interface state by IPE electron photoinjection from the Si substrate is one order of magnitude higher than that from the Al gate for both RTP oxide and nitrided oxide samples at low electron injection fluence, . The polarity dependence of interface state generation is discussed by means of the hydrogen species induced generation model. Photocurrent voltage (photo‐ IV) technique has been used to determine the centrpid and density of trapped charge after IPE electron photoinjection into the dielectrics from both electrodes.