Abstract
The theoretical model of spin-dependent transport in magnetic tunnel junctions (MTJ) containing magnetic or non-magnetic nanoparticle is developed. The dependences of tunnel magnetoresistance (TMR) and in-plane component of spin transfer torque (STT) on the applied voltage for various sizes of nanoparticles of the order of the mean free path of the conduction electron are calculated. The calculation is performed in the approximation of the ballistic transport of conduction electrons through the insulating layers of the MTJ and the nanoparticles.
Highlights
The magnetic tunnel junction (MTJ) are widely studied in spintronics
The effects of tunnel magnetoresistance (TMR) and spin transfer torque (STT) in such nanostructures find their application in magnetic field sensors, spin current filters, non-volatile magnetoresistive randomaccess memory (MRAM, STT-MRAM), resonant tunnel diodes, spin transistors, etc
Double barrier MTJs are promising structures for MRAM applications due to better thermal stability, low noise and less critical current value for the switching in comparison to single barrier tunnel junctions (SMTJs) [1]. Both double barrier magnetic tunnel junctions (DMTJs) and MTJ-NPs show a different spin-dependent quantum effects on ferromagnet/barrier and metallic NP/barrier interfaces, which can be related to Coulomb blockade (CB), quantum well (QW) states, ballistic tunneling, resonant spin filtering and Kondo effect depending on middle layer thickness and applied voltage [2,3,4,5,6,7]
Summary
The magnetic tunnel junction (MTJ) are widely studied in spintronics. The effects of tunnel magnetoresistance (TMR) and spin transfer torque (STT) in such nanostructures find their application in magnetic field sensors, spin current filters, non-volatile magnetoresistive randomaccess memory (MRAM, STT-MRAM), resonant tunnel diodes, spin transistors, etc.The main goal of this work is to highlight the important conditions for dimension and voltage induced thresholds as well as demonstrate TMR and STT behaviors due to presence of nanoparticles (NPs) in insulator of MTJ. Double barrier MTJs are promising structures for MRAM applications due to better thermal stability, low noise and less critical current value for the switching in comparison to single barrier tunnel junctions (SMTJs) [1]. Both DMTJ and MTJ-NPs show a different spin-dependent quantum effects on ferromagnet/barrier and metallic (or magnetic) NP/barrier interfaces, which can be related to Coulomb blockade (CB), quantum well (QW) states, ballistic tunneling, resonant spin filtering and Kondo effect depending on middle layer thickness and applied voltage [2,3,4,5,6,7]
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