Abstract
The main features determining spin-dependent transport in magnetic tunnel junctions are well appreciated now mainly due to ab initio calculations. Nevertheless, it seems useful to have a comparatively simple model which reproduces the salient characteristics of spin-dependent transport in magnetic multilayers. We present two-band tight-binding model of magnetic tunnel junction with the layers of arbitrary thickness and non-collinear magnetization configuration. The model accounts for different symmetry of the tunneling electrons and their mixing on the interfaces. As an illustration for double-barrier structure we calculate I-V curves and spin-transfer torque. The calculations demonstrate the resonant character of the I-V dependences. Also, the significant difference in the magnitude of the torque acting on the various planes of the same magnetic layer is found.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: International Journal of Materials Science and Applications
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.