Abstract
We derive expressions for both parallel and perpendicular components of spin transfer torque (STT) in magnetic tunnel junctions (MTJs), which have several important advantages over the currently available expressions: First they are derived in a more realistic approximation, resulting in excellent agreement with exact results even in the presence of resonant tunneling. Second, we show that they can be expressed in terms of the scattering matrix elements, which gives them a clear physical interpretation. Third, they are given entirely in terms of collinear quantities, which are readily available in existing transport codes. We use these expressions to investigate STT behavior in MTJs with asymmetric barriers at finite bias. The results show that lowering the barrier height in the bulk does not qualitatively change the behavior of STT. The absolute STT increases on account of the overall increase of the barrier transparency; however, the STT efficiency remains in the same range. At the same time, modifications of the interfaces can qualitatively change STT behavior. Thus, interface engineering can be used to control the bias dependence of STT and optimize the performance of STT-based devices.
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