Abstract
Tunneling field-effect transistors (TFETs) were investigated. To realize the potentially low off-current characteristics of the TFETs, the offset drain structure is preferred. We have proposed an oblique drain implantation process utilizing the shadowing effect to fabricate the offset drain, and the effectiveness was studied by simulation and experiment. Extremely low off-currents of 40 fA/µm for the P-TFET and 15 fA/µm for the N-TFET have been demonstrated experimentally.
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