Tunnel FET-based ultra-low power, low-noise amplifier design for bio-signal acquisition

Abstract

Ultra-low power circuit design techniques have enabled rapid progress in biosignal acquisition. The design of a multi-channel biosignal recording system is a challenging task, considering the low amplitude of neural signals and limited power budget for an implantable system. The front-end low-noise amplifier is a critical component with respect to overall power consumption and noise of such system. In this paper, we present a new design of III-V Heterojunction TFET (HTFET)-based neural amplifier employing a telescopic operational transconductance amplifier (OTA) for multi-channel neural spike recording. Exploiting the unique device characteristics of HTFETs, our simulation shows that the proposed amplifier exhibits a midband gain of 39 dB, a gain bandwidth of 12 Hz-2.1 kHz, and an input-referred noise of 6.27 μVrms, consuming 5 nW of power at a 0.5 V supply voltage. Using the proposed HTFET amplifier, a noise efficiency factor (NEF) of 0.64 is achieved, which is significantly lower than the CMOS-based theoretical limit. Design tradeoffs related to gain, power and noise requirements are investigated, based on a comprehensive electrical noise model of HTFET and compared with the baseline Si FinFET design.