Abstract
The control of polarization rotation (PR) is a key issue of applying undoped zinc oxide (ZnO) as information storage devices. A systematic study of ZnO thin films by conducting piezoresponse force microscopy (PFM) technique on samples with different electrodes, film thicknesses, and deposition oxygen partial pressures, PO2 allows disclosing the possible factors those affecting the PR behavior. The results clearly indicate that higher work function conductive material, such as Pt, is a promising candidature as the top electrode and bottom electrode to ensure the PR occur and maintain in ZnO films. From the effects of film thickness study, PR behavior can be observed in film downscaled to 15 nm. However, in order to avoid current leakage and maintain the rotated polarization state, thicker film with about 240 nm is preferred. In addition, in the film deposited with a low PO2 (>5 × 10−6 Torr), more atomic point defects such as oxygen vacancy may lead the sample into a large leakage current and deteriorate the PR behavior. Hence, by this systematic study, it is proved that the PR behavior of undoped ZnO thin films can be optimized with proper deposition parameters.
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