Abstract
We investigated the terahertz (THz)-frequency resonances of two-dimensional electron conductivity under the streaming transport in a GaN quantum well at the nitrogen temperature. The calculation results found that the negative microwave mobility can occur in the narrow windows near the optical-phonon transit-time resonance frequencies, which can be tuned electrically in the 0.2–2.5THz range with the static electric fields of 1–10kV∕cm. The estimated magnitude of the negative mobility reaches hundreds of cm2∕Vs. These effects suggest that the nitride-based heterostructure may enable the development of an electrically pumped, tunable THz source operating at or above 77K.
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