Abstract
Thin Mn <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Ga films were grown on MgO substrates with different thicknesses of Cr buffer layer using the molecular beam epitaxy technique. The cubic half-Heusler C1b structure is obtained when the thickness of Cr buffer layer is below 3 nm. The phase is proven to show soft ferrimagnetism with a saturation magnetization Ms of 280 emu/cc. Tetragonal hard ferrimagnetic Mn <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Ga in D0 <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">22</sub> structure with high-perpendicular magnetic anisotropy is obtained when increasing the thickness of Cr buffer above 3 nm. Different phases of Mn <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Ga films with various thicknesses of Cr buffer can be attributed to the tensile strain and the Cr-Mn <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Ga interface condition.
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