Tunable and Reconfigurable Logic Gates With Electrolyte-Gated Transistor Array Co-Integrated With Neuromorphic Synapses

Abstract

A tunable and reconfigurable logic gates based on an electrolyte-gated transistor (EGT) array are co-integrated with neuromorphic synapses. The tunable and reconfigurable operations of the various logic gates are controlled by analog conductance modulation with nonvolatility of the fabricated EGT. The EGT array was uniformly fabricated on an entire 4-in wafer with the aid of CMOS compatible processes. Initiated-chemical vapor deposition (i-CVD) method was adopted for the deposition of the ultrathin polyethylene glycol dimethacrylate (pEGDMA) electrolyte layer. Therefore, the logic gates could be co-integrated with synaptic devices on the same in-plane substrate for integrability. Basic inverter operation with switching threshold tunability ranging from −1 to +1 V was demonstrated with good operational stability. In addition, NAND and NOR gate operations were realized by modulating the conductance level of a specified cell in the array configuration.