Abstract
The electrical interface properties of a MIS device NiAl 2O 3Si, in which the aluminium oxide film (several hundred ångströms thick) was formed by plasma anodization, have been investigated by capacitive and photoelectrical measurements. A schematic energy band diagram has been drawn. The interface state density has been evaluated and found to increase with surface potential. The investigations also suggest the existence of donor states located in the oxide near the silicon surface. By comparison with the results of other authors, who used different fabrication techniques, the influence of the preparation on interface properties has been examined.
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