Abstract
True random number generation (TRNG) plays an important role in security applications and protocols. In this article, we propose an effective technique to generate a robust true random number using emerging, energy-efficient, nonvolatile, consumer-off-the-shelf (COTS) ferroelectric random access memory (FRAM) chips. In the proposed method, we extract inherent randomness from internal ferroelectric capacitors by exploiting latency variation across cells within FRAM. Hardware results and subsequent National Institute of Standards and Technology (NIST) statistical test suite (STS) testing indicate that the proposed latency-based TRNG is robust over a wide range of operating conditions at speeds of 6.23 Mb/s using COTS, silicon FRAM chips from Cypress Semiconductor Corporation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
