Trilayer Graphene Nanoribbon Field Effect Transistor Analytical Model

Abstract

The approaching scaling of Field Effect Transistors (FETs) in nanometer scale assures the smaller dimension, low-power consumption, low energy delay production, and high density as well as high speed in processor. Trilayer graphene nanoribbon with different stacking arrangements (ABA and ABC) indicates different electrical properties. Based on this theory, ABA-stacked trilayer graphene nanoribbon application as a field effect transistor channel is investigated in this study. The energy band structure of ABA-stacked trilayer graphene nanoribbon in the presence of a perpendicular electric field using a tight-binding model is presented, and the effect of applied voltage on the curvature of the E-K graph is analytically studied. Moreover, an analytical model of carrier statistics for ABA-stacked trilayer graphene nanoribbon in corporation with a numerical solution is presented and current-voltage characteristic of trilayer graphene nanoribbon FET as a one-dimensional device is explored. In fact, the proposed model can be applied as a useful tool to optimize the nanoscale FET based device performance. DOI : http://dx.doi.org/10.11591/telkomnika.v12i4.4698