Trilayer Graphene Nanoribbon Field Effect Transistor Modeling

Abstract

This chapter confirms that the conductivity of BGN is higher than trilayer graphene nanoribbon (TGN) by Comparison between the bilayer graphene nanoribbon (BGN) conductance model with the TGN conductance model. It discusses the model of bilayer graphene, with nanoribbon as a channel in BGN field effect transistor (BGNFET) and the TGN model shows similar external applied electric field and channel length demonstrates that BGN conductivity is more than TGN conductivity. Diamond and graphite are the materials that are extensively investigated in nanoelectronics. Graphene's high electron propagation, which is essential for achieving high-speed and high-performance transistors, is its key advantage; however, for graphene nanoribbon metal—oxide—semiconductor field-effect transistor being used in realistic integrated circuit applications, material properties such as the band gap should be closely controlled. The chapter explains that carrier density incorporation with the energy band of TGN with ABA stacking close to the Fermi level is predicted by the numerical method.