Triboelectric-potential configurable MoTe2 homojunction for photovoltaic device and logic circuits

Abstract

Reconfigurable devices based on two-dimensional materials are considered as one of the ways to extend Moore's Law. However, most reconfigurable devices use a gate voltage to dope the channel electrostatically, and the continuously applied gate voltage poses the problem of high device power consumption. Here, for the first time, we propose a tribotronic reconfigurable MoTe2 field effect transistor, where the power consumption of the device is greatly reduced by using triboelectric potentials generated by external mechanical operations instead of applying gate voltages. The drain current noise spectral density test proves that no additional current noise interferes with the output current during mechanical operation. Mechanical operation allows facile modulation of four different channel polarities (n-n, p-p, p-n, and n-p) in a single transistor. We demonstrate the potential application of a tribotronic p-n diode for photovoltaic device. The logic circuit composed of two tribotronic reconfigurable transistors realizes the logic functions of inverter, AND gate, and OR gate. Our device extends tribotronic logic and demonstrates great potential for human-machine interaction, intelligent sensors, and wearable devices.