Abstract
The low-frequency noise power spectral density of MOSFETs is decreased if the MOSFETs are periodically switched 'off' (switched bias conditions). The influence of the gate oxide thickness on fixed bias and switched biased low frequency drain current noise spectral density of PMOS devices has been experimentally investigated. Under constant bias conditions, it is observed that the current noise spectral density increases linearly with increase in the gate oxide thickness. The larger the measured low-frequency noise under constant bias, the larger is the noise reduction after periodically switching the P-MOSFETs off.
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