Impact of Gaussian Traps on the Characteristics of L-shaped Tunnel Field-effect Transistor

Abstract

Background: Internet of Things (IoT) applications require high-performance TFET devices that can be efficiently integrated with the cyber world and physical world. Objectives: The impact of introducing Gaussian traps in hetero-junction tunneling-field-effecttransistors (TFET) with an L-shaped gate is presented. Methods: The 2-D TCAD study of different characteristics, like input, output characteristics, and noise spectral density with trap and without trap, has been performed. Results: The simulation results showed that in L-shaped TFET (L_TFET), the high on-current of 1.93×10-5 A/μm, low off-current/leakage current of 1.09×10-13 A/μm, and steep sub-threshold slope (SS) of 24 mV/dec without traps and on-current of 8.46×10-6 A/μm, off-current of 2.86×10- 11 A/μm, and degraded SS with traps are observed. They also indicated that the presence of traps reduces gate-drain capacitance (Cgd), while gate-source capacitance (Cgs) remains unaffected. In addition, in L_TFET, the drain current noise spectral density (SID) of 7.63 E-21 (A2/Hz) at LF and 2.69 E-26 (A2/Hz) at HF while the noise voltage spectral density (SVG) of 7.33 E-4 (V2/Hz) at LF and 2.59 E-15 (V2/Hz) at HF without traps have been investigated in this study. The inverse dependence of drain current noise spectral density on frequency has been observed to lower the effect of noise at HF. Conclusion: It can be concluded that the proposed L_TFET device is free from ambipolarity conduction and can be well-suited for low-power applications.