Abstract
Single crystals of U3Si2 and U3Si5 were grown using the modified Czochralski tri-arc growth technique in a gettered argon atmosphere. A variety of growth parameters including seed pull rate, seed rotation rate, crystal size, charge size and stoichiometry were evaluated to determine the best growth conditions in an effort to produce high quality single crystals for property measurements and basic studies. The crystals were characterized for quality, phase purity, density, and axial variations in chemistry. Near phase-pure, single crystals 5 mm in diameter and 35 mm in length were grown with minimal variation in stoichiometry and limited cracking using a crystal rotation rate of 30 rpm, a hearth rotation rate of 22 rpm, and a pull rate of 16 mm/h up to solidified fraction of g = 0.75.
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